A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building next-generation "phase-change" memory devices, which may be the data-storage technology of the future, according to a new paper published in the journal Applied Physics Letters, which is produced by AIP Publishing.
An image of the phase-change memory arrays. For a hi-res version of this image, please contact email@example.com.
Phase-change memory is being actively pursued as an alternative to the ubiquitous flash memory for data storage applications, because flash memory is limited in its storage density and phase-change memory can operate much faster.
Phase-change memory relies on materials that change from a disordered, amorphous structure to a crystalline structure when an electrical pulse is applied. The material has high electrical resistance in its amorphous state and low resistance in its crystalline state -- corresponding to the 1 and 0 states of binary data.
Flash memory has problems when devices get smaller than 20 nanometers. But a phase-change memory device can be less than 10 nanometers -- allowing more memory to be squeezed into tinier spaces. "That's the most important feature of this kind of memory," said Xilin Zhou of the Shanghai Institute of Microsystem and Information Technology at the Chinese Academy of Sciences. Data can also be written into phase-change memories very quickly and the devices would be relatively inexpensive, he added.
So far, the most popular material for phase-change memory devices contains germanium, antimony, and tellurium. But compounds with three elements are more difficult to work with, Zhou said.
“It’s difficult to control the phase-change memory manufacturing process of ternary alloys such as the traditionally used germanium-antimony-tellurium material. Etching and polishing of the material with chalcogens can change the material’s composition, due to the motion of the tellurium atoms,” explained Zhou.
Zhou and his colleagues turned to a material with just two elements: aluminum and antimony. They studied the material's phase-changing properties, finding that it's more thermally stable than the Ge-Sb-Te compound. The researchers discovered that Al50Sb50, in particular, has three distinct levels of resistance -- and thus the ability to store three bits of data in a single memory cell, instead of just two. This suggests that this material can be used for multilevel data storage.
“A two-step resistance drop during the crystallization of the material can be used for multilevel data storage (MLS) and, interestingly, three distinct resistance levels are achieved in the phase-change memory cells,” Zhou says. “So the aluminum-antimony material looks promising for use in high-density nonvolatile memory applications because of its good thermal stability and MLS capacity.”
The researchers are now investigating the endurance or reversible electrical switching of the phase-change memory cell with MLS capacity.
The paper, "Phase-transition characteristics of Al-Sb phase change materials for phase change memory application," by Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Kun Ren, Cheng Peng, Sannian Song, Bo Liu, Ling Xu, and Songlin Feng appears in the journal Applied Physics Letters. See: http://dx.doi.org/10.1063/1.4818662
The authors are affiliated with the Shanghai Institute of Microsystem and Information Technology at the Chinese Academy of Sciences, University of Chinese Academy of Sciences, and the National Laboratory of Solid State Nanostructures at Nanjing University.ABOUT THE JOURNAL
Jason Socrates Bardi | Newswise
Stanford researchers create new special-purpose computer that may someday save us billions
21.10.2016 | Stanford University
New 3-D wiring technique brings scalable quantum computers closer to reality
19.10.2016 | University of Waterloo
Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.
"The quantum socket is a wiring method that uses three-dimensional wires based on spring-loaded pins to address individual qubits," said Jeremy Béjanin, a PhD...
In a paper in Scientific Reports, a research team at Worcester Polytechnic Institute describes a novel light-activated phenomenon that could become the basis for applications as diverse as microscopic robotic grippers and more efficient solar cells.
A research team at Worcester Polytechnic Institute (WPI) has developed a revolutionary, light-activated semiconductor nanocomposite material that can be used...
By forcefully embedding two silicon atoms in a diamond matrix, Sandia researchers have demonstrated for the first time on a single chip all the components needed to create a quantum bridge to link quantum computers together.
"People have already built small quantum computers," says Sandia researcher Ryan Camacho. "Maybe the first useful one won't be a single giant quantum computer...
COMPAMED has become the leading international marketplace for suppliers of medical manufacturing. The trade fair, which takes place every November and is co-located to MEDICA in Dusseldorf, has been steadily growing over the past years and shows that medical technology remains a rapidly growing market.
In 2016, the joint pavilion by the IVAM Microtechnology Network, the Product Market “High-tech for Medical Devices”, will be located in Hall 8a again and will...
'Ferroelectric' materials can switch between different states of electrical polarization in response to an external electric field. This flexibility means they show promise for many applications, for example in electronic devices and computer memory. Current ferroelectric materials are highly valued for their thermal and chemical stability and rapid electro-mechanical responses, but creating a material that is scalable down to the tiny sizes needed for technologies like silicon-based semiconductors (Si-based CMOS) has proven challenging.
Now, Hiroshi Funakubo and co-workers at the Tokyo Institute of Technology, in collaboration with researchers across Japan, have conducted experiments to...
14.10.2016 | Event News
14.10.2016 | Event News
12.10.2016 | Event News
21.10.2016 | Health and Medicine
21.10.2016 | Information Technology
21.10.2016 | Materials Sciences