Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

New '4-D' transistor is preview of future computers

06.12.2012
A new type of transistor shaped like a Christmas tree has arrived just in time for the holidays, but the prototype won't be nestled under the tree along with the other gifts.

"It's a preview of things to come in the semiconductor industry," said Peide "Peter" Ye, a professor of electrical and computer engineering at Purdue University. Researchers from Purdue and Harvard universities created the transistor, which is made from a material that could replace silicon within a decade.

Each transistor contains three tiny nanowires made not of silicon, like conventional transistors, but from a material called indium-gallium-arsenide. The three nanowires are progressively smaller, yielding a tapered cross section resembling a Christmas tree.

The research builds on previous work in which the team created a 3-D structure instead of conventional flat transistors. The approach could enable engineers to build faster, more compact and efficient integrated circuits and lighter laptops that generate less heat than today's. New findings show how to improve the device performance by linking the transistors vertically in parallel.

"A one-story house can hold so many people, but more floors, more people, and it's the same thing with transistors," Ye said. "Stacking them results in more current and much faster operation for high-speed computing. This adds a whole new dimension, so I call them 4-D."

Findings will be detailed in two papers to be presented during the International Electron Devices Meeting on Dec. 8-12 in San Francisco. One of the papers has been highlighted by conference organizers as among "the most newsworthy topics and papers to be presented."

The work is led by Purdue doctoral student Jiangjiang Gu and Harvard postdoctoral researcher Xinwei Wang.

The newest generation of silicon computer chips, introduced this year, contain transistors having a vertical 3-D structure instead of a conventional flat design. However, because silicon has a limited "electron mobility" - how fast electrons flow - other materials will likely be needed soon to continue advancing transistors with this 3-D approach, Ye said.

Indium-gallium-arsenide is among several promising semiconductors being studied to replace silicon. Such semiconductors are called III-V materials because they combine elements from the third and fifth groups of the periodic table.

The authors of the research papers are Gu; Wang; Purdue doctoral student H. Wu; Purdue postdoctoral research associate J. Shao; Purdue doctoral student A. T. Neal; Michael J. Manfra, Purdue's William F. and Patty J. Miller Associate Professor of Physics; Roy Gordon, Harvard's Thomas D. Cabot Professor of Chemistry; and Ye.

Transistors contain critical components called gates, which enable the devices to switch on and off and to direct the flow of electrical current. Smaller gates make faster operation possible. In today's 3-D silicon transistors, the length of these gates is about 22 nanometers, or billionths of a meter.

The 3-D design is critical because gate lengths of 22 nanometers and smaller do not work well in a flat transistor architecture. Engineers are working to develop transistors that use even smaller gate lengths; 14 nanometers are expected by 2015, and 10 nanometers by 2018.

However, size reductions beyond 10 nanometers and additional performance improvements are likely not possible using silicon, meaning new materials will be needed to continue progress, Ye said.

Creating smaller transistors also will require finding a new type of insulating, or "dielectric" layer that allows the gate to switch off. As gate lengths shrink smaller than 14 nanometers, the dielectric used in conventional transistors fails to perform properly and is said to "leak" electrical charge when the transistor is turned off.

Nanowires in the new transistors are coated with a different type of composite insulator, a 4-nanometer-thick layer of lanthanum aluminate with an ultrathin, half-nanometer layer of aluminum oxide. The new ultrathin dielectric allowed researchers to create transistors made of indium-gallium- arsenide with 20-nanometer gates, which is a milestone, Ye said.

The work, based at the Birck Nanotechnology Center in Purdue's Discovery Park, is funded by the National Science Foundation and the Semiconductor Research Corp.

Writer: Emil Venere, 765-494-4709, venere@purdue.edu

Source: Peide Ye, 765-494-7611, yep@purdue.edu

Related websites:

Peide Ye: http://cobweb.ecn.purdue.edu/~yep/

International Electron Devices Meeting: http://www.his.com/~iedm/

Birck Nanotechnology Center: http://www.purdue.edu/discoverypark/nanotechnology/

Emil Venere | EurekAlert!
Further information:
http://www.purdue.edu

More articles from Information Technology:

nachricht Construction of practical quantum computers radically simplified
05.12.2016 | University of Sussex

nachricht UT professor develops algorithm to improve online mapping of disaster areas
29.11.2016 | University of Tennessee at Knoxville

All articles from Information Technology >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Significantly more productivity in USP lasers

In recent years, lasers with ultrashort pulses (USP) down to the femtosecond range have become established on an industrial scale. They could advance some applications with the much-lauded “cold ablation” – if that meant they would then achieve more throughput. A new generation of process engineering that will address this issue in particular will be discussed at the “4th UKP Workshop – Ultrafast Laser Technology” in April 2017.

Even back in the 1990s, scientists were comparing materials processing with nanosecond, picosecond and femtosesecond pulses. The result was surprising:...

Im Focus: Shape matters when light meets atom

Mapping the interaction of a single atom with a single photon may inform design of quantum devices

Have you ever wondered how you see the world? Vision is about photons of light, which are packets of energy, interacting with the atoms or molecules in what...

Im Focus: Novel silicon etching technique crafts 3-D gradient refractive index micro-optics

A multi-institutional research collaboration has created a novel approach for fabricating three-dimensional micro-optics through the shape-defined formation of porous silicon (PSi), with broad impacts in integrated optoelectronics, imaging, and photovoltaics.

Working with colleagues at Stanford and The Dow Chemical Company, researchers at the University of Illinois at Urbana-Champaign fabricated 3-D birefringent...

Im Focus: Quantum Particles Form Droplets

In experiments with magnetic atoms conducted at extremely low temperatures, scientists have demonstrated a unique phase of matter: The atoms form a new type of quantum liquid or quantum droplet state. These so called quantum droplets may preserve their form in absence of external confinement because of quantum effects. The joint team of experimental physicists from Innsbruck and theoretical physicists from Hannover report on their findings in the journal Physical Review X.

“Our Quantum droplets are in the gas phase but they still drop like a rock,” explains experimental physicist Francesca Ferlaino when talking about the...

Im Focus: MADMAX: Max Planck Institute for Physics takes up axion research

The Max Planck Institute for Physics (MPP) is opening up a new research field. A workshop from November 21 - 22, 2016 will mark the start of activities for an innovative axion experiment. Axions are still only purely hypothetical particles. Their detection could solve two fundamental problems in particle physics: What dark matter consists of and why it has not yet been possible to directly observe a CP violation for the strong interaction.

The “MADMAX” project is the MPP’s commitment to axion research. Axions are so far only a theoretical prediction and are difficult to detect: on the one hand,...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

ICTM Conference 2017: Production technology for turbomachine manufacturing of the future

16.11.2016 | Event News

Innovation Day Laser Technology – Laser Additive Manufacturing

01.11.2016 | Event News

#IC2S2: When Social Science meets Computer Science - GESIS will host the IC2S2 conference 2017

14.10.2016 | Event News

 
Latest News

Robot on demand: Mobile machining of aircraft components with high precision

06.12.2016 | Power and Electrical Engineering

A new dead zone in the Indian Ocean could impact future marine nutrient balance

06.12.2016 | Earth Sciences

Significantly more productivity in USP lasers

06.12.2016 | Physics and Astronomy

VideoLinks
B2B-VideoLinks
More VideoLinks >>>