Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Tiny transistors for extreme environs

20.03.2014

University of Utah engineers shrink plasma devices to resist radiation

University of Utah electrical engineers fabricated the smallest plasma transistors that can withstand high temperatures and ionizing radiation found in a nuclear reactor. Such transistors someday might enable smartphones that take and collect medical X-rays on a battlefield, and devices to measure air quality in real time.

Microplasma Transistor

University of Utah electrical engineers test a microplasma transistor by applying a voltage through four electrodes touching the surface of the transistor. Plasma is a charged gas that conducts electricity, seen here as a pink glowing light. Unlike typical transistors, the Utah microplasma transistor uses an air gap that conducts ions and electrons from a helium plasma once a voltage is applied. The new devices are designed to withstand ionizing radiation.

Credit: Dan Hixson, College of Engineering, University of Utah.

"These plasma-based electronics can be used to control and guide robots to conduct tasks inside the nuclear reactor," says Massood Tabib-Azar, a professor of electrical and computer engineering. "Microplasma transistors in a circuit can also control nuclear reactors if something goes wrong, and also could work in the event of nuclear attack."

A study of the new transistors by Tabib-Azar and electrical engineering doctoral student Pradeep Pai appears online Thursday, March 20 in the journal IEEE Electron Device Letters, published by the Institute of Electrical and Electronics Engineers. The study was funded by the Defense Advanced Research Projects Agency.

Transistors are the workhorses of the electronics industry. They control how electricity flows in devices and act as a switch or gate for electronic signals. Billions of transistors are typically fabricated as individual but connected components on a single computer chip. The most commonly used type of transistor is called a metal oxide semiconductor field effect transistor, or MOSFET.

Transistors control the flow of electrical charge through a silicon channel using an electric field to turn the transistor on or off, similar to a valve with the electric field as its control knob and electric charge as its current flow. Silicon-based transistors are a crucial component in modern electronics, but they fail above 550 degrees Fahrenheit – the temperature at which nuclear reactors typically operate.

Plasma-based transistors, which use charged gases or plasma to conduct electricity at extremely high temperatures, are employed currently in light sources, medical instruments and certain displays under direct sunlight (but not plasma TVs, which are different). These microscale devices are about 500 microns long, or roughly the width of five human hairs. They operate at more than 300 volts, requiring special high-voltage sources. Standard electrical outlets in the United States operate at 110 volts.

The new devices designed by the University of Utah engineers are the smallest microscale plasma transistors to date. They measure 1 micron to 6 microns in length, or as much as 500 times smaller than current state-of-the-art microplasma devices, and operate at one-sixth the voltage. They also can operate at temperatures up to 1,450 degrees Fahrenheit. Since nuclear radiation ionizes gases into plasma, this extreme environment makes it easier for plasma devices to operate.

"Plasmas are great for extreme environments because they are based on gases such as helium, argon and neon that can withstand high temperatures," says Tabib-Azar. "This transistor has the potential to start a new class of electronic devices that are happy to work in a nuclear environment."

A conventional transistor is made with two active layers, one on top of the other. Electricity flows through one of the layers, called the channel. The other layer, called the gate, controls current flowing in the channel. If sufficient voltage is applied to the gate, the transistor turns on.

For the new study, Tabib-Azar and Pai deposited layers of a metal alloy to form the gate on a 4-inch glass wafer. A layer of silicon then was deposited on top of the gate.

Unlike typical transistors, the Utah microplasma transistor "channel" is an air gap that conducts ions and electrons from the plasma once a voltage is applied. To achieve this unique design, the team etched away portions of the silicon film using a chemically reactive gas. This etching process leaves behind cavities and empty spaces to form the transistor's channel and expose the gate underneath. The channel tested in this new study was 2 microns wide and 10 microns long, and helium was used as the plasma source.

"Although the length scales are much smaller here, we came up with an innovative way to make these structures three-dimensional," Tabib-Azar says. "We are currently connecting these devices to form logic gates and computing circuits that we will test in our experimental nuclear reactor at the University of Utah, a facility not found in most other universities."

Traditional MOSFETs require metal to connect circuits, says Tabib-Azar, but the Utah microplasma devices will use a plasma-based connection to enable communication. As a result, these circuits will only be operational when powered up and will disappear otherwise, making them suitable for defense applications.

These plasma devices could also be used as an X-ray imaging source in the next five years, says Tabib-Azar. Because the device dimensions are so small, X-ray images from a wounded soldier in the field could be collected on a smartphone equipped with transistors that also generate the X-rays, says Tabib-Azar.

In another five years, the devices could be used to detect and identify aerosol pollutants based on the color emitted when the substance passes through the device. "These chemical sensing devices could be used to quantitatively monitor air quality in real time and enable researchers to construct an accurate air-quality map," he adds.

In the nearer-term, these new transistors could be used to generate X-rays to draw fine lines in silicon to pattern microscale devices for the electronics industry. With this new X-ray technique, Tabib-Azar says, "you can do the same thing you would with laser printing, but instead you can use these tiny X-ray sources to print on a silicon wafer. This gives engineers the ability to do X-ray lithography without having to use very heavy lenses and X-ray beam shaping devices."

###

University of Utah College of Engineering
72 S. Central Campus Dr., Room 1650 WEB, Salt Lake City, UT 84112
801-581-6911 fax: 801-581-8692
http://www.coe.utah.edu

Aditi Risbud | EurekAlert!

Further reports about: Fahrenheit X-ray X-rays electricity enable gases microscale reactor temperatures transistors voltage

More articles from Power and Electrical Engineering:

nachricht Thermo-Optical Measuring method (TOM) could save several million tons of CO2 in coal-fired plants
25.05.2016 | Fraunhofer-Institut für Silicatforschung ISC

nachricht Atomic precision: technologies for the next-but-one generation of microchips
24.05.2016 | Fraunhofer-Institut für Lasertechnik ILT

All articles from Power and Electrical Engineering >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Computational high-throughput screening finds hard magnets containing less rare earth elements

Permanent magnets are very important for technologies of the future like electromobility and renewable energy, and rare earth elements (REE) are necessary for their manufacture. The Fraunhofer Institute for Mechanics of Materials IWM in Freiburg, Germany, has now succeeded in identifying promising approaches and materials for new permanent magnets through use of an in-house simulation process based on high-throughput screening (HTS). The team was able to improve magnetic properties this way and at the same time replaced REE with elements that are less expensive and readily available. The results were published in the online technical journal “Scientific Reports”.

The starting point for IWM researchers Wolfgang Körner, Georg Krugel, and Christian Elsässer was a neodymium-iron-nitrogen compound based on a type of...

Im Focus: Atomic precision: technologies for the next-but-one generation of microchips

In the Beyond EUV project, the Fraunhofer Institutes for Laser Technology ILT in Aachen and for Applied Optics and Precision Engineering IOF in Jena are developing key technologies for the manufacture of a new generation of microchips using EUV radiation at a wavelength of 6.7 nm. The resulting structures are barely thicker than single atoms, and they make it possible to produce extremely integrated circuits for such items as wearables or mind-controlled prosthetic limbs.

In 1965 Gordon Moore formulated the law that came to be named after him, which states that the complexity of integrated circuits doubles every one to two...

Im Focus: Researchers demonstrate size quantization of Dirac fermions in graphene

Characterization of high-quality material reveals important details relevant to next generation nanoelectronic devices

Quantum mechanics is the field of physics governing the behavior of things on atomic scales, where things work very differently from our everyday world.

Im Focus: Graphene: A quantum of current

When current comes in discrete packages: Viennese scientists unravel the quantum properties of the carbon material graphene

In 2010 the Nobel Prize in physics was awarded for the discovery of the exceptional material graphene, which consists of a single layer of carbon atoms...

Im Focus: Transparent - Flexible - Printable: Key technologies for tomorrow’s displays

The trend-forward world of display technology relies on innovative materials and novel approaches to steadily advance the visual experience, for example through higher pixel densities, better contrast, larger formats or user-friendler design. Fraunhofer ISC’s newly developed materials for optics and electronics now broaden the application potential of next generation displays. Learn about lower cost-effective wet-chemical printing procedures and the new materials at the Fraunhofer ISC booth # 1021 in North Hall D during the SID International Symposium on Information Display held from 22 to 27 May 2016 at San Francisco’s Moscone Center.

Economical processing

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

Networking 4.0: International Laser Technology Congress AKL’16 Shows New Ways of Cooperations

24.05.2016 | Event News

Challenges of rural labor markets

20.05.2016 | Event News

International expert meeting “Health Business Connect” in France

19.05.2016 | Event News

 
Latest News

LZH shows the potential of the laser for industrial manufacturing at the LASYS 2016

25.05.2016 | Trade Fair News

Great apes communicate cooperatively

25.05.2016 | Life Sciences

Thermo-Optical Measuring method (TOM) could save several million tons of CO2 in coal-fired plants

25.05.2016 | Power and Electrical Engineering

VideoLinks
B2B-VideoLinks
More VideoLinks >>>