Researchers at Rochester Institute of Technology, international semiconductor consortium SEMATECH and Texas State University have demonstrated that use of new methods and materials for building integrated circuits can reduce power—extending battery life to 10 times longer for mobile applications compared to conventional transistors.The key to the breakthrough is a tunneling field effect transistor. Transistors are switches that control the movement of electrons through material to conduct the electrical currents needed to run circuits. Unlike standard transistors, which are like driving a car over a hill, the tunneling field effect transistor is more like tunneling through a hill, says Sean Rommel, associate professor of electrical and microelectronic engineering.
“This work may be used by others in designing higher performance tunneling field effect transistors which may enable future low power integrated circuits for your mobile device,” he says.The team’s findings in the area of developing high performance, low-power electronic devices are also detailed in the paper, “Benchmarking and Improving III-V Esaki Diode Performance with a Record 2.2 MA cm2 Current Density to Enhance Tunneling Field-Effect Transistor Drive Current.” The National Science Foundation, SEMATECH and RIT’s Office of the Vice President of Research sponsor the work.
Michelle Cometa | EurekAlert!
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