Advances in miniaturization have made electronic devices cheaper and more powerful, but these procedures also create new challenges for materials scientists. For example, traditional silicon dioxide insulators used in field-effect transistors begin to leak small amounts of current at nanoscale dimensions.
A new theoretical model enables accurate predictions of dipoles at oxide interfaces (left, electron microscopy image) using the classical property of electronegativity (right). The scale shows how two elements with different relative electronegativities align at an interface.
Copyright : © 2013 A*STAR Institute of Materials Research and Engineering
The A*STAR-affiliated researchers contributing to this research are from the Institute of Materials Research and Engineering
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26.10.2016 | Technologie Lizenz-Büro (TLB) der Baden-Württembergischen Hochschulen GmbH
26.10.2016 | Vienna University of Technology
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