Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

World's fastest transistor approaches goal of terahertz device

13.12.2006
Scientists at the University of Illinois at Urbana-Champaign have again broken their own speed record for the world’s fastest transistor. With a frequency of 845 gigahertz, their latest device is approximately 300 gigahertz faster than transistors built by other research groups, and approaches the goal of a terahertz device.

Made from indium phosphide and indium gallium arsenide, "the new transistor utilizes a pseudomorphic grading of the base and collector regions," said Milton Feng, the Holonyak Chair Professor of Electrical and Computer Engineering at Illinois. "The compositional grading of these components enhances the electron velocity, hence, reduces both current density and charging time."

With their latest device, Feng and his research group have taken the transistor to a new range of high-speed operation, bringing the "Holy Grail" of a terahertz transistor finally within reach. Faster transistors translate into faster computers, more flexible and secure wireless communications systems, and more effective combat systems.

In addition to using pseudomorphic material construction, the researchers also refined their fabrication process to produce tinier transistor components. For example, the transistor’s base is only 12.5 nanometers thick (a nanometer is one billionth of a meter, or about 10,000 times smaller than the width of a human hair).

"By scaling the device vertically, we have reduced the distance electrons have to travel, resulting in an increase in transistor speed," said graduate student William Snodgrass, who will describe the new device at the International Electronics Device Meeting in San Francisco, Dec. 11-13. "Because the size of the collector has also been reduced laterally, the transistor can charge and discharge faster."

Operated at room temperature (25 degrees Celsius), the transistor speed is 765 gigahertz. Chilled to minus 55 degrees Celsius, the speed increases to 845 gigahertz.

Feng, Snodgrass and graduate student Walid Hafez (now at Intel Corp.) fabricated the high-speed device in the university’s Micro and Nanotechnology Laboratory.

In addition to further increasing the transistor speed, Feng wants to reduce the current density even more, which will reduce junction temperature and improve device reliability.

James E. Kloeppel | EurekAlert!
Further information:
http://www.uiuc.edu

More articles from Power and Electrical Engineering:

nachricht Did you know that the wrapping of Easter eggs benefits from specialty light sources?
13.04.2017 | Heraeus Noblelight GmbH

nachricht To e-, or not to e-, the question for the exotic 'Si-III' phase of silicon
05.04.2017 | Carnegie Institution for Science

All articles from Power and Electrical Engineering >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Making lightweight construction suitable for series production

More and more automobile companies are focusing on body parts made of carbon fiber reinforced plastics (CFRP). However, manufacturing and repair costs must be further reduced in order to make CFRP more economical in use. Together with the Volkswagen AG and five other partners in the project HolQueSt 3D, the Laser Zentrum Hannover e.V. (LZH) has developed laser processes for the automatic trimming, drilling and repair of three-dimensional components.

Automated manufacturing processes are the basis for ultimately establishing the series production of CFRP components. In the project HolQueSt 3D, the LZH has...

Im Focus: Wonder material? Novel nanotube structure strengthens thin films for flexible electronics

Reflecting the structure of composites found in nature and the ancient world, researchers at the University of Illinois at Urbana-Champaign have synthesized thin carbon nanotube (CNT) textiles that exhibit both high electrical conductivity and a level of toughness that is about fifty times higher than copper films, currently used in electronics.

"The structural robustness of thin metal films has significant importance for the reliable operation of smart skin and flexible electronics including...

Im Focus: Deep inside Galaxy M87

The nearby, giant radio galaxy M87 hosts a supermassive black hole (BH) and is well-known for its bright jet dominating the spectrum over ten orders of magnitude in frequency. Due to its proximity, jet prominence, and the large black hole mass, M87 is the best laboratory for investigating the formation, acceleration, and collimation of relativistic jets. A research team led by Silke Britzen from the Max Planck Institute for Radio Astronomy in Bonn, Germany, has found strong indication for turbulent processes connecting the accretion disk and the jet of that galaxy providing insights into the longstanding problem of the origin of astrophysical jets.

Supermassive black holes form some of the most enigmatic phenomena in astrophysics. Their enormous energy output is supposed to be generated by the...

Im Focus: A Quantum Low Pass for Photons

Physicists in Garching observe novel quantum effect that limits the number of emitted photons.

The probability to find a certain number of photons inside a laser pulse usually corresponds to a classical distribution of independent events, the so-called...

Im Focus: Microprocessors based on a layer of just three atoms

Microprocessors based on atomically thin materials hold the promise of the evolution of traditional processors as well as new applications in the field of flexible electronics. Now, a TU Wien research team led by Thomas Müller has made a breakthrough in this field as part of an ongoing research project.

Two-dimensional materials, or 2D materials for short, are extremely versatile, although – or often more precisely because – they are made up of just one or a...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

Expert meeting “Health Business Connect” will connect international medical technology companies

20.04.2017 | Event News

Wenn der Computer das Gehirn austrickst

18.04.2017 | Event News

7th International Conference on Crystalline Silicon Photovoltaics in Freiburg on April 3-5, 2017

03.04.2017 | Event News

 
Latest News

DGIST develops 20 times faster biosensor

24.04.2017 | Physics and Astronomy

Nanoimprinted hyperlens array: Paving the way for practical super-resolution imaging

24.04.2017 | Materials Sciences

Atomic-level motion may drive bacteria's ability to evade immune system defenses

24.04.2017 | Life Sciences

VideoLinks
B2B-VideoLinks
More VideoLinks >>>