Penn State and Philips researchers have merged the best features of their respective approaches to produce a new mathematical model that describes the behavior of the MOS transistor in a wide class of integrated circuits found in the majority of electronic devices from computers to digital watches to communications systems.
Certain circuits can only be simulated accurately using the new approach, known as the PSP model, including passive mixers used in mobile phones to increase battery life and current-ratio based circuits used in analog to digital converters.
In addition, PSP has better RF capabilities than the existing models and accurately predicts transistor behavior up to frequencies well above 50 GHz.
Barbara Hale | EurekAlert!
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Physicists have developed a new technique that uses electrical voltages to control the electron spin on a chip. The newly-developed method provides protection from spin decay, meaning that the contained information can be maintained and transmitted over comparatively large distances, as has been demonstrated by a team from the University of Basel’s Department of Physics and the Swiss Nanoscience Institute. The results have been published in Physical Review X.
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