Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

New mathematical model better describes transistor behavior

11.05.2005


Penn State and Philips researchers have merged the best features of their respective approaches to produce a new mathematical model that describes the behavior of the MOS transistor in a wide class of integrated circuits found in the majority of electronic devices from computers to digital watches to communications systems.



Certain circuits can only be simulated accurately using the new approach, known as the PSP model, including passive mixers used in mobile phones to increase battery life and current-ratio based circuits used in analog to digital converters.

In addition, PSP has better RF capabilities than the existing models and accurately predicts transistor behavior up to frequencies well above 50 GHz.


Dr. Gennady Gildenblat, professor of electrical engineering, leads PSP development at Penn State. He says, "Fabricating integrated circuits is expensive and improving them by trial and error adds significantly to that expense. Accurate models that provide detailed mathematical descriptions offer engineers the chance to do science-based engineering and to get it right the first time." Gildenblat will detail PSP in an invited talk, "Introduction to PSP MOSFET Model," at the Nanotech 2005 International Conference, May 10, in Anaheim, Ca. His co-authors are X. Li, H. Wang and W. Wu, electrical engineering graduate students at Penn State, and R. van Langevelde, A. J. Scholten, G. D. J. Smit and D. B. M. Klaassen, Philips Research Laboratories, The Netherlands.

The key variable in the PSP model is surface potential at the interface between the silicon and silicon dioxide in the transistor. Since PSP is based on this physical variable, it yields better predictions of the behavior of integrated circuits than is possible with alternative models, especially when devices are miniaturized or are operated at their limits, the developers say.

Models, such as PSP, which describe transistors in a mathematical way, are used in circuit simulators. For example, PSP has been tested on a simulation of a passive mixer, a surprisingly difficult problem that Gildenblat and others only accomplished recently. In addition, PSP has been verified against measurements on transistors from various manufacturers, including those made with the latest technology.

All details of the PSP model are being made available on the Internet. Philips SIMKit software allows PSP to be directly coupled to many popular circuit simulators.

Speaking of the Penn State/Philips collaboration, Dr. Dirk Klaassen, research fellow at Philips Research, says, "Our cooperation brings together the best fundamental academic and pragmatic industrial knowledge and expertise on compact modeling. It directly ties our combined deep understanding of the physical behavior of MOS transistors onto the requirements set by IC designers and the application areas most relevant to them."

PSP is being submitted to the Compact Model Council (CMC) as a candidate for standardization. The Council represents 27 major semiconductor companies that use models. The Council chooses candidates for standardization based on the technical needs of its members. The CMC is scheduled to select a new model for CMOS transistors later this year.

Barbara Hale | EurekAlert!
Further information:
http://www.psu.edu

More articles from Power and Electrical Engineering:

nachricht Positrons as a new tool for lithium ion battery research: Holes in the electrode
22.02.2017 | Technische Universität München

nachricht Multicrystalline Silicon Solar Cell with 21.9 % Efficiency: Fraunhofer ISE Again Holds World Record
20.02.2017 | Fraunhofer-Institut für Solare Energiesysteme ISE

All articles from Power and Electrical Engineering >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Breakthrough with a chain of gold atoms

In the field of nanoscience, an international team of physicists with participants from Konstanz has achieved a breakthrough in understanding heat transport

In the field of nanoscience, an international team of physicists with participants from Konstanz has achieved a breakthrough in understanding heat transport

Im Focus: DNA repair: a new letter in the cell alphabet

Results reveal how discoveries may be hidden in scientific “blind spots”

Cells need to repair damaged DNA in our genes to prevent the development of cancer and other diseases. Our cells therefore activate and send “repair-proteins”...

Im Focus: Dresdner scientists print tomorrow’s world

The Fraunhofer IWS Dresden and Technische Universität Dresden inaugurated their jointly operated Center for Additive Manufacturing Dresden (AMCD) with a festive ceremony on February 7, 2017. Scientists from various disciplines perform research on materials, additive manufacturing processes and innovative technologies, which build up components in a layer by layer process. This technology opens up new horizons for component design and combinations of functions. For example during fabrication, electrical conductors and sensors are already able to be additively manufactured into components. They provide information about stress conditions of a product during operation.

The 3D-printing technology, or additive manufacturing as it is often called, has long made the step out of scientific research laboratories into industrial...

Im Focus: Mimicking nature's cellular architectures via 3-D printing

Research offers new level of control over the structure of 3-D printed materials

Nature does amazing things with limited design materials. Grass, for example, can support its own weight, resist strong wind loads, and recover after being...

Im Focus: Three Magnetic States for Each Hole

Nanometer-scale magnetic perforated grids could create new possibilities for computing. Together with international colleagues, scientists from the Helmholtz Zentrum Dresden-Rossendorf (HZDR) have shown how a cobalt grid can be reliably programmed at room temperature. In addition they discovered that for every hole ("antidot") three magnetic states can be configured. The results have been published in the journal "Scientific Reports".

Physicist Dr. Rantej Bali from the HZDR, together with scientists from Singapore and Australia, designed a special grid structure in a thin layer of cobalt in...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

Booth and panel discussion – The Lindau Nobel Laureate Meetings at the AAAS 2017 Annual Meeting

13.02.2017 | Event News

Complex Loading versus Hidden Reserves

10.02.2017 | Event News

International Conference on Crystal Growth in Freiburg

09.02.2017 | Event News

 
Latest News

Positrons as a new tool for lithium ion battery research: Holes in the electrode

22.02.2017 | Power and Electrical Engineering

New insights into the information processing of motor neurons

22.02.2017 | Life Sciences

Healthy Hiking in Smart Socks

22.02.2017 | Innovative Products

VideoLinks
B2B-VideoLinks
More VideoLinks >>>