A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz transistor for high-speed computing and communications applications could now be within reach.
The new device - built from indium phosphide and indium gallium arsenide - is designed with a compositionally graded collector, base and emitter to reduce transit time and improve current density. With their pseudomorphic heterojunction bipolar transistor, the researchers have demonstrated a speed of 604 gigahertz - the fastest transistor operation to date.
"Pseudomorphic grading of the material structure allows us to lower the bandgap in selected areas," said Milton Feng, the Holonyak Professor of Electrical and Computer Engineering and a researcher at the Coordinated Science Laboratory at Illinois. "This permits faster electron flow in the collector. The compositional grading of the transistor components also improves current density and signal charging time."
Feng and graduate student Walid Hafez fabricated the new device in the universitys Micro and Nanotechnology Laboratory. They describe the pseudomorphic HBT concept, and discuss the transistors high-speed operation, in the April 11 issue of the journal Applied Physics Letters.
The goal of a terahertz transistor was not possible using the previous device structure, Feng said. "To achieve such speed in a typical HBT, the current density would become so large it would melt the components. In our pseudomorphic HBT, we can operate at higher frequencies with less current density. With this new material structure, a terahertz transistor is achievable."
Faster transistors could facilitate faster computers, more flexible and secure wireless communications systems, and more effective electronic combat systems.
James E. Kloeppel | University of Illinois News Bure
A big nano boost for solar cells
18.01.2017 | Kyoto University and Osaka Gas effort doubles current efficiencies
Multiregional brain on a chip
16.01.2017 | Harvard John A. Paulson School of Engineering and Applied Sciences
An important step towards a completely new experimental access to quantum physics has been made at University of Konstanz. The team of scientists headed by...
Yersiniae cause severe intestinal infections. Studies using Yersinia pseudotuberculosis as a model organism aim to elucidate the infection mechanisms of these...
Researchers from the University of Hamburg in Germany, in collaboration with colleagues from the University of Aarhus in Denmark, have synthesized a new superconducting material by growing a few layers of an antiferromagnetic transition-metal chalcogenide on a bismuth-based topological insulator, both being non-superconducting materials.
While superconductivity and magnetism are generally believed to be mutually exclusive, surprisingly, in this new material, superconducting correlations...
Laser-driving of semimetals allows creating novel quasiparticle states within condensed matter systems and switching between different states on ultrafast time scales
Studying properties of fundamental particles in condensed matter systems is a promising approach to quantum field theory. Quasiparticles offer the opportunity...
Among the general public, solar thermal energy is currently associated with dark blue, rectangular collectors on building roofs. Technologies are needed for aesthetically high quality architecture which offer the architect more room for manoeuvre when it comes to low- and plus-energy buildings. With the “ArKol” project, researchers at Fraunhofer ISE together with partners are currently developing two façade collectors for solar thermal energy generation, which permit a high degree of design flexibility: a strip collector for opaque façade sections and a solar thermal blind for transparent sections. The current state of the two developments will be presented at the BAU 2017 trade fair.
As part of the “ArKol – development of architecturally highly integrated façade collectors with heat pipes” project, Fraunhofer ISE together with its partners...
19.01.2017 | Event News
10.01.2017 | Event News
09.01.2017 | Event News
20.01.2017 | Awards Funding
20.01.2017 | Materials Sciences
20.01.2017 | Life Sciences