Researchers at the University of Illinois at Urbana-Champaign have broken their own record for the worlds fastest transistor. Their latest device, with a frequency of 509 gigahertz, is 57 gigahertz faster than their previous record holder and could find use in applications such as high-speed communications products, consumer electronics and electronic combat systems.
"The steady rise in the speed of bipolar transistors has relied largely on the vertical scaling of the epitaxial layer structure to reduce the carrier transit time," said Milton Feng, the Holonyak Professor of Electrical and Computer Engineering at Illinois, whose team has been working on high-speed compound semiconductor transistors since 1995. "However, this comes at the cost of increasing the base-collector capacitance. To compensate for this unwanted effect, we have employed lateral scaling of both the emitter and the collector."
Feng and graduate students Walid Hafez and Jie-Wei Lai fabricated the high-speed devices in the universitys Micro and Nanotechnology Laboratory. Unlike traditional transistors, which are built from silicon and germanium, the Illinois transistors are made from indium phosphide and indium gallium arsenide.
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13.04.2017 | Heraeus Noblelight GmbH
To e-, or not to e-, the question for the exotic 'Si-III' phase of silicon
05.04.2017 | Carnegie Institution for Science
More and more automobile companies are focusing on body parts made of carbon fiber reinforced plastics (CFRP). However, manufacturing and repair costs must be further reduced in order to make CFRP more economical in use. Together with the Volkswagen AG and five other partners in the project HolQueSt 3D, the Laser Zentrum Hannover e.V. (LZH) has developed laser processes for the automatic trimming, drilling and repair of three-dimensional components.
Automated manufacturing processes are the basis for ultimately establishing the series production of CFRP components. In the project HolQueSt 3D, the LZH has...
Reflecting the structure of composites found in nature and the ancient world, researchers at the University of Illinois at Urbana-Champaign have synthesized thin carbon nanotube (CNT) textiles that exhibit both high electrical conductivity and a level of toughness that is about fifty times higher than copper films, currently used in electronics.
"The structural robustness of thin metal films has significant importance for the reliable operation of smart skin and flexible electronics including...
The nearby, giant radio galaxy M87 hosts a supermassive black hole (BH) and is well-known for its bright jet dominating the spectrum over ten orders of magnitude in frequency. Due to its proximity, jet prominence, and the large black hole mass, M87 is the best laboratory for investigating the formation, acceleration, and collimation of relativistic jets. A research team led by Silke Britzen from the Max Planck Institute for Radio Astronomy in Bonn, Germany, has found strong indication for turbulent processes connecting the accretion disk and the jet of that galaxy providing insights into the longstanding problem of the origin of astrophysical jets.
Supermassive black holes form some of the most enigmatic phenomena in astrophysics. Their enormous energy output is supposed to be generated by the...
The probability to find a certain number of photons inside a laser pulse usually corresponds to a classical distribution of independent events, the so-called...
Microprocessors based on atomically thin materials hold the promise of the evolution of traditional processors as well as new applications in the field of flexible electronics. Now, a TU Wien research team led by Thomas Müller has made a breakthrough in this field as part of an ongoing research project.
Two-dimensional materials, or 2D materials for short, are extremely versatile, although – or often more precisely because – they are made up of just one or a...
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