Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

IMEC and AIXTRON set important step towards low-cost GaN power devices

03.06.2008
IMEC, an independent European research center in the field of nanoelectronics, and AIXTRON, a metal-organic chemical-vapor deposition (MOCVD) equipment supplier, have demonstrated the growth of high-quality and uniform AlGaN/GaN heterostructures on 200mm silicon wafers. This demonstration is a milestone towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.

IMEC and AIXTRON deposited, for the first time ever, crack-free AlGaN/GaN structures onto 200mm Si(111) wafers. The layers show good crystalline quality as measured by high-resolution x-ray diffraction (HR-XRD). Excellent morphology and uniformity were obtained as well. The high-quality AlGaN and GaN layers were grown in AIXTRON’s application laboratory on the 300mm CRIUS metal-organic chemical-vapor-phase epitaxy (MOVPE) reactor.

“The demonstration of GaN growth on 200mm Si wafers is an important step towards processing GaN devices on large Si wafers”, said Marianne Germain, Program Manager of IMEC’s Efficient Power program. “There is a strong demand for GaN-based solid-state switching devices in the field of power conversion. However, bringing GaN devices to a level acceptable for most applications requires a drastic reduction in the cost of this technology. And that is only possible by processing on large-diameter Si wafers. 150mm, and then 200mm are the minimum wafer sizes we need to fully leverage today’s silicon processing capabilities.” The bow of the resulting wafers is still quite large, in the range of 100µm; but IMEC believes that an optimized buffer can reduce this bow drastically, enabling further processing. Marianne Germain: “We aim to further develop the growth process and to qualify the wafers to be compatible with Si-CMOS process.”

Gallium nitride (GaN) has outstanding capabilities for power, low-noise, high-frequency, high-temperature operations, even in harsh environment (radiation); it considerably extends the application field of solid-state devices. Due to the lack of commercially available GaN substrates, GaN heterostructures are nowadays grown mainly on sapphire and silicon carbide (SiC). Si is a very attractive alternative, being much cheaper than sapphire and SiC. Other benefits include the acceptable thermal conductivity of Si (half of that of SiC) and its availability in large quantities and large wafer sizes. But until now, Si wafers with (111) surface orientation were only available with a diameter up to 150mm. The 200mm wafers were custom-made by MEMC Electronic Materials, Inc. using the Czochralski growth (CZ) method. CZ wafers are ideally suited for switching applications with large breakdown voltages. For such devices, the performance is independent of the resistivity of the Si substrate.

Process details

For the AlGaN/GaN heterostructures, a standard layer stack, that had already been successfully demonstrated on 100 and 150mm Si(111) substrates, was used.

First an AlN layer was deposited onto the Si substrate, followed by an AlGaN buffer which provides compressive stress in the 1 micron thick GaN top layer. The stack was finished with a 20nm thin AlGaN (26% Al) layer and capped with a 2nm GaN layer. From in-situ measurements, researchers from IMEC were able to extract the thickness uniformity of the different layers which show a standard deviation well below 1% over the full 200mm wafers (5mm EE).

Katrien Marent | alfa
Further information:
http://www.imec.be
http://www.aixtron.com

More articles from Power and Electrical Engineering:

nachricht Waste from paper and pulp industry supplies raw material for development of new redox flow batteries
12.10.2017 | Johannes Gutenberg-Universität Mainz

nachricht Low-cost battery from waste graphite
11.10.2017 | Empa - Eidgenössische Materialprüfungs- und Forschungsanstalt

All articles from Power and Electrical Engineering >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Salmonella as a tumour medication

HZI researchers developed a bacterial strain that can be used in cancer therapy

Salmonellae are dangerous pathogens that enter the body via contaminated food and can cause severe infections. But these bacteria are also known to target...

Im Focus: Neutron star merger directly observed for the first time

University of Maryland researchers contribute to historic detection of gravitational waves and light created by event

On August 17, 2017, at 12:41:04 UTC, scientists made the first direct observation of a merger between two neutron stars--the dense, collapsed cores that remain...

Im Focus: Breaking: the first light from two neutron stars merging

Seven new papers describe the first-ever detection of light from a gravitational wave source. The event, caused by two neutron stars colliding and merging together, was dubbed GW170817 because it sent ripples through space-time that reached Earth on 2017 August 17. Around the world, hundreds of excited astronomers mobilized quickly and were able to observe the event using numerous telescopes, providing a wealth of new data.

Previous detections of gravitational waves have all involved the merger of two black holes, a feat that won the 2017 Nobel Prize in Physics earlier this month....

Im Focus: Smart sensors for efficient processes

Material defects in end products can quickly result in failures in many areas of industry, and have a massive impact on the safe use of their products. This is why, in the field of quality assurance, intelligent, nondestructive sensor systems play a key role. They allow testing components and parts in a rapid and cost-efficient manner without destroying the actual product or changing its surface. Experts from the Fraunhofer IZFP in Saarbrücken will be presenting two exhibits at the Blechexpo in Stuttgart from 7–10 November 2017 that allow fast, reliable, and automated characterization of materials and detection of defects (Hall 5, Booth 5306).

When quality testing uses time-consuming destructive test methods, it can result in enormous costs due to damaging or destroying the products. And given that...

Im Focus: Cold molecules on collision course

Using a new cooling technique MPQ scientists succeed at observing collisions in a dense beam of cold and slow dipolar molecules.

How do chemical reactions proceed at extremely low temperatures? The answer requires the investigation of molecular samples that are cold, dense, and slow at...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

3rd Symposium on Driving Simulation

23.10.2017 | Event News

ASEAN Member States discuss the future role of renewable energy

17.10.2017 | Event News

World Health Summit 2017: International experts set the course for the future of Global Health

10.10.2017 | Event News

 
Latest News

Shrews shrink in winter and regrow in spring

24.10.2017 | Life Sciences

Microfluidics probe 'cholesterol' of the oil industry

23.10.2017 | Life Sciences

Gamma rays will reach beyond the limits of light

23.10.2017 | Physics and Astronomy

VideoLinks
B2B-VideoLinks
More VideoLinks >>>