In a paper to appear in the IEEE (Institute of Electrical and Electronics Engineers) journal Electron Device Letters, U. of I. electrical and computer engineering professor Xiuling Li and graduate research assistant Seth Fortuna describe the first metal-semiconductor field-effect transistor fabricated with a self-assembled, planar gallium-arsenide nanowire channel.
Nanowires are attractive building blocks for both electronics and photonics applications. Compound semiconductor nanowires, such as gallium arsenide, are especially desirable because of their better transport properties and versatile heterojunctions. However, a number of challenges – including integration with existing microelectronics – must first be overcome.
"Our new planar growth process creates self-aligned, defect-free gallium-arsenide nanowires that could readily be scaled up for manufacturing purposes," said Li, who also is affiliated with the university's Micro and Nanoelectronics Laboratory and the Beckman Institute. "It's a non-lithographic process that can precisely control the nanowire dimension and orientation, yet is compatible with existing circuit design and fabrication technology."
The gallium-arsenide nanowire channel used in the researchers' demonstration transistor was grown by metal organic chemical vapor deposition using gold as a catalyst. The rest of the transistor was made with conventional microfabrication techniques.
While the diameter of the transistor's nanowire channel was approximately 200 nanometers, nanowires with diameters as small as 5 nanometers can be made with the gold-catalyzed growth technique, the researchers report. The self-aligned orientation of the nanowires is determined by the crystal structure of the substrate and certain growth parameters.
In earlier work, Li and Fortuna demonstrated they could grow the nanowires and then transfer-print them on other substrates, including silicon, for heterogeneous integration. "Transferring the self-aligned planar nanowires while maintaining both their position and alignment could enable flexible electronics and photonics at a true nanometer scale," the researchers wrote in the December 2008 issue of the journal Nano Letters.
In work presented in the current paper, the researchers grew the gallium-arsenide nanowire channel in place, instead of transferring it. In contrast to the common types of non-planar gallium arsenide nanowires, the researchers' planar nanowire was free from twin defects, which are rotational defects in the crystal structure that decrease the mobility of the charge carriers.
"By replacing the standard channel in a metal-semiconductor field-effect transistor with one of our planar nanowires, we demonstrated that the defect-free nanowire's electron mobility was indeed as high as the corresponding bulk value," Fortuna said. "The high electron mobility nanowire channel could lead to smaller, better and faster devices."
Considering their planar, self-aligned and transferable nature, the nanowire channels could help create higher performance transistors for next-generation integrated circuit applications, Li said.
The high quality planar nanowires can also be used in nano-injection lasers for use in optical communications.
The researchers are also developing new device concepts driven by further engineering of the planar one-dimensional nanostructure.
The work was supported by the National Science Foundation.
James E. Kloeppel | EurekAlert!
Further reports about: > Microelectronics > Semiconductor nanowires > crystal structure > electron mobility > fabrication technology > first metal-semiconductor field-effect transistor > gallium arsenide > gold-catalyzed growth technique > nanowire channels > non-lithographic process > optical communication > self-aligned planar nanowires > transistors
Energy hybrid: Battery meets super capacitor
01.12.2016 | Technische Universität Graz
Tailor-Made Membranes for the Environment
30.11.2016 | Forschungszentrum Jülich
A multi-institutional research collaboration has created a novel approach for fabricating three-dimensional micro-optics through the shape-defined formation of porous silicon (PSi), with broad impacts in integrated optoelectronics, imaging, and photovoltaics.
Working with colleagues at Stanford and The Dow Chemical Company, researchers at the University of Illinois at Urbana-Champaign fabricated 3-D birefringent...
In experiments with magnetic atoms conducted at extremely low temperatures, scientists have demonstrated a unique phase of matter: The atoms form a new type of quantum liquid or quantum droplet state. These so called quantum droplets may preserve their form in absence of external confinement because of quantum effects. The joint team of experimental physicists from Innsbruck and theoretical physicists from Hannover report on their findings in the journal Physical Review X.
“Our Quantum droplets are in the gas phase but they still drop like a rock,” explains experimental physicist Francesca Ferlaino when talking about the...
The Max Planck Institute for Physics (MPP) is opening up a new research field. A workshop from November 21 - 22, 2016 will mark the start of activities for an innovative axion experiment. Axions are still only purely hypothetical particles. Their detection could solve two fundamental problems in particle physics: What dark matter consists of and why it has not yet been possible to directly observe a CP violation for the strong interaction.
The “MADMAX” project is the MPP’s commitment to axion research. Axions are so far only a theoretical prediction and are difficult to detect: on the one hand,...
Broadband rotational spectroscopy unravels structural reshaping of isolated molecules in the gas phase to accommodate water
In two recent publications in the Journal of Chemical Physics and in the Journal of Physical Chemistry Letters, researchers around Melanie Schnell from the Max...
The efficiency of power electronic systems is not solely dependent on electrical efficiency but also on weight, for example, in mobile systems. When the weight of relevant components and devices in airplanes, for instance, is reduced, fuel savings can be achieved and correspondingly greenhouse gas emissions decreased. New materials and components based on gallium nitride (GaN) can help to reduce weight and increase the efficiency. With these new materials, power electronic switches can be operated at higher switching frequency, resulting in higher power density and lower material costs.
Researchers at the Fraunhofer Institute for Solar Energy Systems ISE together with partners have investigated how these materials can be used to make power...
16.11.2016 | Event News
01.11.2016 | Event News
14.10.2016 | Event News
02.12.2016 | Medical Engineering
02.12.2016 | Agricultural and Forestry Science
02.12.2016 | Physics and Astronomy