In a paper to appear in the IEEE (Institute of Electrical and Electronics Engineers) journal Electron Device Letters, U. of I. electrical and computer engineering professor Xiuling Li and graduate research assistant Seth Fortuna describe the first metal-semiconductor field-effect transistor fabricated with a self-assembled, planar gallium-arsenide nanowire channel.
Nanowires are attractive building blocks for both electronics and photonics applications. Compound semiconductor nanowires, such as gallium arsenide, are especially desirable because of their better transport properties and versatile heterojunctions. However, a number of challenges – including integration with existing microelectronics – must first be overcome.
"Our new planar growth process creates self-aligned, defect-free gallium-arsenide nanowires that could readily be scaled up for manufacturing purposes," said Li, who also is affiliated with the university's Micro and Nanoelectronics Laboratory and the Beckman Institute. "It's a non-lithographic process that can precisely control the nanowire dimension and orientation, yet is compatible with existing circuit design and fabrication technology."
The gallium-arsenide nanowire channel used in the researchers' demonstration transistor was grown by metal organic chemical vapor deposition using gold as a catalyst. The rest of the transistor was made with conventional microfabrication techniques.
While the diameter of the transistor's nanowire channel was approximately 200 nanometers, nanowires with diameters as small as 5 nanometers can be made with the gold-catalyzed growth technique, the researchers report. The self-aligned orientation of the nanowires is determined by the crystal structure of the substrate and certain growth parameters.
In earlier work, Li and Fortuna demonstrated they could grow the nanowires and then transfer-print them on other substrates, including silicon, for heterogeneous integration. "Transferring the self-aligned planar nanowires while maintaining both their position and alignment could enable flexible electronics and photonics at a true nanometer scale," the researchers wrote in the December 2008 issue of the journal Nano Letters.
In work presented in the current paper, the researchers grew the gallium-arsenide nanowire channel in place, instead of transferring it. In contrast to the common types of non-planar gallium arsenide nanowires, the researchers' planar nanowire was free from twin defects, which are rotational defects in the crystal structure that decrease the mobility of the charge carriers.
"By replacing the standard channel in a metal-semiconductor field-effect transistor with one of our planar nanowires, we demonstrated that the defect-free nanowire's electron mobility was indeed as high as the corresponding bulk value," Fortuna said. "The high electron mobility nanowire channel could lead to smaller, better and faster devices."
Considering their planar, self-aligned and transferable nature, the nanowire channels could help create higher performance transistors for next-generation integrated circuit applications, Li said.
The high quality planar nanowires can also be used in nano-injection lasers for use in optical communications.
The researchers are also developing new device concepts driven by further engineering of the planar one-dimensional nanostructure.
The work was supported by the National Science Foundation.
James E. Kloeppel | EurekAlert!
Further reports about: > Microelectronics > Semiconductor nanowires > crystal structure > electron mobility > fabrication technology > first metal-semiconductor field-effect transistor > gallium arsenide > gold-catalyzed growth technique > nanowire channels > non-lithographic process > optical communication > self-aligned planar nanowires > transistors
Fraunhofer ISE Supports Market Development of Solar Thermal Power Plants in the MENA Region
21.02.2018 | Fraunhofer-Institut für Solare Energiesysteme ISE
New tech for commercial Lithium-ion batteries finds they can be charged 5 times fast
20.02.2018 | University of Warwick
Quantum computers may one day solve algorithmic problems which even the biggest supercomputers today can’t manage. But how do you test a quantum computer to...
For the first time, a team of researchers at the Max-Planck Institute (MPI) for Polymer Research in Mainz, Germany, has succeeded in making an integrated circuit (IC) from just a monolayer of a semiconducting polymer via a bottom-up, self-assembly approach.
In the self-assembly process, the semiconducting polymer arranges itself into an ordered monolayer in a transistor. The transistors are binary switches used...
Breakthrough provides a new concept of the design of molecular motors, sensors and electricity generators at nanoscale
Researchers from the Institute of Organic Chemistry and Biochemistry of the CAS (IOCB Prague), Institute of Physics of the CAS (IP CAS) and Palacký University...
For photographers and scientists, lenses are lifesavers. They reflect and refract light, making possible the imaging systems that drive discovery through the microscope and preserve history through cameras.
But today's glass-based lenses are bulky and resist miniaturization. Next-generation technologies, such as ultrathin cameras or tiny microscopes, require...
Scientists from the University of Zurich have succeeded for the first time in tracking individual stem cells and their neuronal progeny over months within the intact adult brain. This study sheds light on how new neurons are produced throughout life.
The generation of new nerve cells was once thought to taper off at the end of embryonic development. However, recent research has shown that the adult brain...
15.02.2018 | Event News
13.02.2018 | Event News
12.02.2018 | Event News
22.02.2018 | Life Sciences
22.02.2018 | Physics and Astronomy
22.02.2018 | Earth Sciences