Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:


Self-assembled nanowires could make chips smaller and faster

Researchers at the University of Illinois have found a new way to make transistors smaller and faster. The technique uses self-assembled, self-aligned, and defect-free nanowire channels made of gallium arsenide.

In a paper to appear in the IEEE (Institute of Electrical and Electronics Engineers) journal Electron Device Letters, U. of I. electrical and computer engineering professor Xiuling Li and graduate research assistant Seth Fortuna describe the first metal-semiconductor field-effect transistor fabricated with a self-assembled, planar gallium-arsenide nanowire channel.

Nanowires are attractive building blocks for both electronics and photonics applications. Compound semiconductor nanowires, such as gallium arsenide, are especially desirable because of their better transport properties and versatile heterojunctions. However, a number of challenges – including integration with existing microelectronics – must first be overcome.

"Our new planar growth process creates self-aligned, defect-free gallium-arsenide nanowires that could readily be scaled up for manufacturing purposes," said Li, who also is affiliated with the university's Micro and Nanoelectronics Laboratory and the Beckman Institute. "It's a non-lithographic process that can precisely control the nanowire dimension and orientation, yet is compatible with existing circuit design and fabrication technology."

The gallium-arsenide nanowire channel used in the researchers' demonstration transistor was grown by metal organic chemical vapor deposition using gold as a catalyst. The rest of the transistor was made with conventional microfabrication techniques.

While the diameter of the transistor's nanowire channel was approximately 200 nanometers, nanowires with diameters as small as 5 nanometers can be made with the gold-catalyzed growth technique, the researchers report. The self-aligned orientation of the nanowires is determined by the crystal structure of the substrate and certain growth parameters.

In earlier work, Li and Fortuna demonstrated they could grow the nanowires and then transfer-print them on other substrates, including silicon, for heterogeneous integration. "Transferring the self-aligned planar nanowires while maintaining both their position and alignment could enable flexible electronics and photonics at a true nanometer scale," the researchers wrote in the December 2008 issue of the journal Nano Letters.

In work presented in the current paper, the researchers grew the gallium-arsenide nanowire channel in place, instead of transferring it. In contrast to the common types of non-planar gallium arsenide nanowires, the researchers' planar nanowire was free from twin defects, which are rotational defects in the crystal structure that decrease the mobility of the charge carriers.

"By replacing the standard channel in a metal-semiconductor field-effect transistor with one of our planar nanowires, we demonstrated that the defect-free nanowire's electron mobility was indeed as high as the corresponding bulk value," Fortuna said. "The high electron mobility nanowire channel could lead to smaller, better and faster devices."

Considering their planar, self-aligned and transferable nature, the nanowire channels could help create higher performance transistors for next-generation integrated circuit applications, Li said.

The high quality planar nanowires can also be used in nano-injection lasers for use in optical communications.

The researchers are also developing new device concepts driven by further engineering of the planar one-dimensional nanostructure.

The work was supported by the National Science Foundation.

James E. Kloeppel | EurekAlert!
Further information:

More articles from Power and Electrical Engineering:

nachricht Greater Range and Longer Lifetime
26.10.2016 | Technologie Lizenz-Büro (TLB) der Baden-Württembergischen Hochschulen GmbH

nachricht 3-D-printed magnets
26.10.2016 | Vienna University of Technology

All articles from Power and Electrical Engineering >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: Etching Microstructures with Lasers

Ultrafast lasers have introduced new possibilities in engraving ultrafine structures, and scientists are now also investigating how to use them to etch microstructures into thin glass. There are possible applications in analytics (lab on a chip) and especially in electronics and the consumer sector, where great interest has been shown.

This new method was born of a surprising phenomenon: irradiating glass in a particular way with an ultrafast laser has the effect of making the glass up to a...

Im Focus: Light-driven atomic rotations excite magnetic waves

Terahertz excitation of selected crystal vibrations leads to an effective magnetic field that drives coherent spin motion

Controlling functional properties by light is one of the grand goals in modern condensed matter physics and materials science. A new study now demonstrates how...

Im Focus: New 3-D wiring technique brings scalable quantum computers closer to reality

Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.

"The quantum socket is a wiring method that uses three-dimensional wires based on spring-loaded pins to address individual qubits," said Jeremy Béjanin, a PhD...

Im Focus: Scientists develop a semiconductor nanocomposite material that moves in response to light

In a paper in Scientific Reports, a research team at Worcester Polytechnic Institute describes a novel light-activated phenomenon that could become the basis for applications as diverse as microscopic robotic grippers and more efficient solar cells.

A research team at Worcester Polytechnic Institute (WPI) has developed a revolutionary, light-activated semiconductor nanocomposite material that can be used...

Im Focus: Diamonds aren't forever: Sandia, Harvard team create first quantum computer bridge

By forcefully embedding two silicon atoms in a diamond matrix, Sandia researchers have demonstrated for the first time on a single chip all the components needed to create a quantum bridge to link quantum computers together.

"People have already built small quantum computers," says Sandia researcher Ryan Camacho. "Maybe the first useful one won't be a single giant quantum computer...

All Focus news of the innovation-report >>>



Event News

#IC2S2: When Social Science meets Computer Science - GESIS will host the IC2S2 conference 2017

14.10.2016 | Event News

Agricultural Trade Developments and Potentials in Central Asia and the South Caucasus

14.10.2016 | Event News

World Health Summit – Day Three: A Call to Action

12.10.2016 | Event News

Latest News

Greater Range and Longer Lifetime

26.10.2016 | Power and Electrical Engineering

VDI presents International Bionic Award of the Schauenburg Foundation

26.10.2016 | Awards Funding

3-D-printed magnets

26.10.2016 | Power and Electrical Engineering

More VideoLinks >>>