University of Wisconsin-Madison researchers have demonstrated a way to release thin membranes of semiconductors from a substrate and transfer them to new surfaces-an advance that could unite the properties of silicon and many other materials, including diamond, metal and even plastic.
Led by materials science and engineering graduate student Michelle Roberts, the team reports in the April 9 issue of Nature Materials that the freed membranes, just tens of nanometers thick, retain all the properties of silicon in wafer form. Yet, the nanomembranes are flexible, and by varying the thicknesses of the silicon and silicon-germanium layers composing them, scientists can make membrane shapes ranging from flat to curved to tubular.
Most importantly, the technique stretches the nanomembranes in a predictable and easily controlled manner, says materials science and engineering professor Max Lagally, who is Roberts advisor. In silicon that is stretched, or under tensile strain, current flows faster-a fact engineers already exploit to help control silicons conductivity and produce speedier electronics. Strain also becomes important whenever different materials are integrated.
Max Lagally | EurekAlert!
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Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.
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By forcefully embedding two silicon atoms in a diamond matrix, Sandia researchers have demonstrated for the first time on a single chip all the components needed to create a quantum bridge to link quantum computers together.
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COMPAMED has become the leading international marketplace for suppliers of medical manufacturing. The trade fair, which takes place every November and is co-located to MEDICA in Dusseldorf, has been steadily growing over the past years and shows that medical technology remains a rapidly growing market.
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'Ferroelectric' materials can switch between different states of electrical polarization in response to an external electric field. This flexibility means they show promise for many applications, for example in electronic devices and computer memory. Current ferroelectric materials are highly valued for their thermal and chemical stability and rapid electro-mechanical responses, but creating a material that is scalable down to the tiny sizes needed for technologies like silicon-based semiconductors (Si-based CMOS) has proven challenging.
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