At present, high performance transistors are only available in crystalline materials which are expensive and have to be attached ex-situ onto larger area substrates, which adds to the expense and complexity of system design. If both the electronics and display substrates can be integrated onto one platform, it would usher a new dawn in immersive and personal electronics.
Individuals will thus be able to communicate, send and receive information of value, and access data about their current environment and health status with freedom, at leisure, and in comfort. However, in general, the deposition of semiconductor films used to make transistors on such substrates has to be carried out at low temperatures to preserve substrate integrity. As a result, the quality of the organic or inorganic semiconductor films is severely constrained, and has a dramatic influence on the transistor performance.
In a recent report to be published in Science - 'Engineering Perspectives', backed by a further paper to appear in IEEE Electron Device Letters, engineers propose the use of clever transistor structure designs to overcome some of the issues with obtaining suitably low power and high speed operations in standard material systems.
In the first collaborative work with Hitachi Central Research Laboratory, Japan, researchers at the Advanced Technology Institute of the University of Surrey have experimentally and theoretically demonstrated that for transistors of disordered silicon films, superior switching performance (low leakage current, and steep sub-threshold slope) can be achieved by making the conduction channel in the transistor very thin.
A higher ION/IOFF ratio, which exceeds 1011, can be achieved for devices with a 2.0-nm-thick channel. Another seminal work from the same research laboratory at Surrey, is on the newly developed source-gated transistor (SGT) concept by Professor John Shannon. Compared to a field-effect transistor, the SGTs can operate with very short source-drain separations even with a thick gate insulator layer to achieve high speed, good stability and superior control of current uniformity, providing a significant advantage in terms of the fabrication process.
Dr Xiaojun Guo, one of the lead investigators, comments: "Engineering of the transistor structure itself rather than the channel material can lead to improved device performance. It will enable the design of high-performance large area circuits and systems based on low-cost reliable material processes".
Professor Ravi Silva, Director of the Advanced Technology Institute states: "This work will help extend the already well established CMOS fabrication technologies for use in large area applications such as displays and sensors, which are at the heart of consumer electronics. The ATI is fortunate that we have been at the forefront of two potential technologies that can lead to enhanced device performance in disordered materials by clever nano-scale structural design of disordered transistors. This type of work sponsored by the EPSRC forms the bedrock for future electronic technologies".
This research will be published in the journal 'Science', and a more detailed version of the nano-designed transistor will appear in 'IEEE Electron Device Letters'.
Stuart Miller | alfa
From ancient fossils to future cars
21.10.2016 | University of California - Riverside
Study explains strength gap between graphene, carbon fiber
20.10.2016 | Rice University
Researchers from the Institute for Quantum Computing (IQC) at the University of Waterloo led the development of a new extensible wiring technique capable of controlling superconducting quantum bits, representing a significant step towards to the realization of a scalable quantum computer.
"The quantum socket is a wiring method that uses three-dimensional wires based on spring-loaded pins to address individual qubits," said Jeremy Béjanin, a PhD...
In a paper in Scientific Reports, a research team at Worcester Polytechnic Institute describes a novel light-activated phenomenon that could become the basis for applications as diverse as microscopic robotic grippers and more efficient solar cells.
A research team at Worcester Polytechnic Institute (WPI) has developed a revolutionary, light-activated semiconductor nanocomposite material that can be used...
By forcefully embedding two silicon atoms in a diamond matrix, Sandia researchers have demonstrated for the first time on a single chip all the components needed to create a quantum bridge to link quantum computers together.
"People have already built small quantum computers," says Sandia researcher Ryan Camacho. "Maybe the first useful one won't be a single giant quantum computer...
COMPAMED has become the leading international marketplace for suppliers of medical manufacturing. The trade fair, which takes place every November and is co-located to MEDICA in Dusseldorf, has been steadily growing over the past years and shows that medical technology remains a rapidly growing market.
In 2016, the joint pavilion by the IVAM Microtechnology Network, the Product Market “High-tech for Medical Devices”, will be located in Hall 8a again and will...
'Ferroelectric' materials can switch between different states of electrical polarization in response to an external electric field. This flexibility means they show promise for many applications, for example in electronic devices and computer memory. Current ferroelectric materials are highly valued for their thermal and chemical stability and rapid electro-mechanical responses, but creating a material that is scalable down to the tiny sizes needed for technologies like silicon-based semiconductors (Si-based CMOS) has proven challenging.
Now, Hiroshi Funakubo and co-workers at the Tokyo Institute of Technology, in collaboration with researchers across Japan, have conducted experiments to...
14.10.2016 | Event News
14.10.2016 | Event News
12.10.2016 | Event News
21.10.2016 | Health and Medicine
21.10.2016 | Information Technology
21.10.2016 | Materials Sciences