Forum for Science, Industry and Business

Sponsored by:     3M 
Search our Site:

 

Next-Generation Semiconductors Synthesis

13.11.2013
Aluminum Nitride Semiconductors Synthesized at Significantly Reduced Temperatures -- Described in the Journal "Applied Physics Letters"

Although silicon semiconductors are nearly universal in modern electronics, devices made from silicon have limitations—including that they cease to function properly at very high temperatures.

One promising alternative are semiconductors made from combinations of aluminum, gallium, and indium with nitrogen to form aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN), which are stronger and more stable than their silicon counterparts, function at high temperatures, are piezoelectric (that is, generate voltage under mechanical force), and are transparent to, and can emit, visible light.

Conventional processes for producing AIN layers run at temperatures as high as 1150 degrees Celsius, and offer limited control over the thickness of the layers. Now a new technique, described in the AIP Publishing journal Applied Physics Letters, offers a way to produce high-quality AlN layers with atomic-scale thickness and at half the temperature of other methods.

Neeraj Nepal and colleagues of the United States Naval Research Laboratory in Washington, D.C. formed AIN layers using atomic layer epitaxy (ALE), in which materials are "grown," layer-by-layer, by sequentially employing two self-limiting chemical reactions onto a surface.

"For instance to grow aluminum nitride, you would inject a pulse of an aluminum precursor into the growth zone where it would coat all surfaces," explained Nepal. "After purging any excess aluminum precursor away, you would then ‘build’ the crystal by injecting a pulse of the nitrogen precursors into the growth zone, where it reacts with the aluminum precursor at the surface to form a layer of AlN. Then you’d purge any excess nitrogen and reaction products away and repeat the process."

With this process, the researchers produced a material with qualities similar to those synthesized at much higher temperatures, but under conditions that allow it to be integrated in new ways for the fabrication of devices for technologies such as transistors and switches.

The work, Nepal says, expands the potential for new advanced specialty materials that could be used, for example, in next-generation high-frequency radiofrequency electronics, such as those used for high-speed data transfer and cell phone services.

The article, "Epitaxial Growth of AlN Films via Plasma-assisted Atomic Layer Epitaxy" by N. Nepal, S. B. Qadri, J. K. Hite, N.A. Mahadik, M.A. Mastro, and C. R. Eddy, Jr. appears in the journal Applied Physics Letters. See: http://dx.doi.org/10.1063/1.4818792

ABOUT THE JOURNAL
Applied Physics Letters features concise, rapid reports on significant new findings in applied physics. The journal covers new experimental and theoretical research on applications of physics phenomena related to all branches of science, engineering, and modern technology. See: http://apl.aip.org

Jason Socrates Bardi | Newswise
Further information:
http://www.aip.org

More articles from Materials Sciences:

nachricht Nanomaterial makes laser light more applicable
28.03.2017 | Christian-Albrechts-Universität zu Kiel

nachricht New value added to the ICSD (Inorganic Crystal Structure Database)
27.03.2017 | FIZ Karlsruhe – Leibniz-Institut für Informationsinfrastruktur GmbH

All articles from Materials Sciences >>>

The most recent press releases about innovation >>>

Die letzten 5 Focus-News des innovations-reports im Überblick:

Im Focus: A Challenging European Research Project to Develop New Tiny Microscopes

The Institute of Semiconductor Technology and the Institute of Physical and Theoretical Chemistry, both members of the Laboratory for Emerging Nanometrology (LENA), at Technische Universität Braunschweig are partners in a new European research project entitled ChipScope, which aims to develop a completely new and extremely small optical microscope capable of observing the interior of living cells in real time. A consortium of 7 partners from 5 countries will tackle this issue with very ambitious objectives during a four-year research program.

To demonstrate the usefulness of this new scientific tool, at the end of the project the developed chip-sized microscope will be used to observe in real-time...

Im Focus: Giant Magnetic Fields in the Universe

Astronomers from Bonn and Tautenburg in Thuringia (Germany) used the 100-m radio telescope at Effelsberg to observe several galaxy clusters. At the edges of these large accumulations of dark matter, stellar systems (galaxies), hot gas, and charged particles, they found magnetic fields that are exceptionally ordered over distances of many million light years. This makes them the most extended magnetic fields in the universe known so far.

The results will be published on March 22 in the journal „Astronomy & Astrophysics“.

Galaxy clusters are the largest gravitationally bound structures in the universe. With a typical extent of about 10 million light years, i.e. 100 times the...

Im Focus: Tracing down linear ubiquitination

Researchers at the Goethe University Frankfurt, together with partners from the University of Tübingen in Germany and Queen Mary University as well as Francis Crick Institute from London (UK) have developed a novel technology to decipher the secret ubiquitin code.

Ubiquitin is a small protein that can be linked to other cellular proteins, thereby controlling and modulating their functions. The attachment occurs in many...

Im Focus: Perovskite edges can be tuned for optoelectronic performance

Layered 2D material improves efficiency for solar cells and LEDs

In the eternal search for next generation high-efficiency solar cells and LEDs, scientists at Los Alamos National Laboratory and their partners are creating...

Im Focus: Polymer-coated silicon nanosheets as alternative to graphene: A perfect team for nanoelectronics

Silicon nanosheets are thin, two-dimensional layers with exceptional optoelectronic properties very similar to those of graphene. Albeit, the nanosheets are less stable. Now researchers at the Technical University of Munich (TUM) have, for the first time ever, produced a composite material combining silicon nanosheets and a polymer that is both UV-resistant and easy to process. This brings the scientists a significant step closer to industrial applications like flexible displays and photosensors.

Silicon nanosheets are thin, two-dimensional layers with exceptional optoelectronic properties very similar to those of graphene. Albeit, the nanosheets are...

All Focus news of the innovation-report >>>

Anzeige

Anzeige

Event News

International Land Use Symposium ILUS 2017: Call for Abstracts and Registration open

20.03.2017 | Event News

CONNECT 2017: International congress on connective tissue

14.03.2017 | Event News

ICTM Conference: Turbine Construction between Big Data and Additive Manufacturing

07.03.2017 | Event News

 
Latest News

Transport of molecular motors into cilia

28.03.2017 | Life Sciences

A novel hybrid UAV that may change the way people operate drones

28.03.2017 | Information Technology

NASA spacecraft investigate clues in radiation belts

28.03.2017 | Physics and Astronomy

VideoLinks
B2B-VideoLinks
More VideoLinks >>>