The new technique could help improve the reliability and manufacturability of ICs and, better yet, it’s one that state-of-the-art microelectronics manufacturers can use with equipment they already own.
At issue is the mechanical strength of so-called “low-k” dielectric layers—electrically insulating films only a couple of micrometers thick that are interleaved between layers of conductors and components in microprocessor chips and other high-performance semiconductor devices. As IC features like transistors have gotten ever smaller and crammed more closely together, designers are preventing electrical interference or “cross-talk” by making the insulating films more and more porous with nanoscale voids—but this has made them more fragile. Brittle fracture failure of low-k insulating films remains a problem for the industry, affecting both manufacturing yields and device reliability. To date, there has been no accurate method to measure the fracture resistance of such films, which makes it difficult to design improved dielectrics.
NIST researchers believe they have found an answer to the measurement problem in a new adaptation of a materials test technique called nanoindentation. Nanoindentation works by pressing a sharp, hard object—a diamond tip—and observing how much pressure it takes to deform the material. For roughly 20 years, researchers have known how to measure elasticity and plasticity—the forces needed to bend a material either temporarily or permanently—of materials at very small scales with nanoindenters. But toughness, the force needed to actually break the material, has been, well, tougher. Thin films were particularly problematic because they necessarily must be layered on top of another stronger material, such as a silicon wafer.
The new NIST technique requires a slight modification of the nanoindentation equipment—the probe has to have a sharper, more acute point than normally used—and a hefty dose of theory. Pressing carefully on the dielectric film generates cracks as small as 300 nanometers, which are measured by electron microscopy. Just how the cracks form depends on a complex interaction involving indentation force, film thickness, film stress and the elastic properties of the film and the silicon substrate. These variables are plugged into a new fracture mechanics model that predicts not only the fracture toughness but also another key value, the critical film thickness for spontaneous fracture.
Using this methodology, device manufacturers will be able to eliminate some candidate interconnect dielectric films from consideration without further expensive device testing. The measurement technique and model were published in a two-part series in the Journal of Materials Research.*
* D.J. Morris and R.F. Cook. Indentation fracture of low-dielectric constant films: Part I. Experiments and observations. J. Mater. Res., Vol. 23, No. 9, p. 2429.
* D.J. Morris and R.F. Cook. Indentation fracture of low-dielectric constant films: Part II. Indentation fracture mechanics model. J. Mater. Res., Vol. 23, No. 9, p. 2443.
Michael Baum | Newswise Science News
Further reports about: > Cracking a Tough Nut > Semiconductor > elastic properties > film thickness > high-performance semiconductor devices > indentation force > microprocessor chips > semiconductor device > semiconductor industry > spontaneous fracture > state-of-the-art microelectronics manufacturers
Robust and functional – surface finishing by suspension spraying
19.09.2017 | Fraunhofer-Institut für Keramische Technologien und Systeme IKTS
Graphene and other carbon nanomaterials can replace scarce metals
19.09.2017 | Chalmers University of Technology
Whispering gallery mode (WGM) resonators are used to make tiny micro-lasers, sensors, switches, routers and other devices. These tiny structures rely on a...
Using ultrafast flashes of laser and x-ray radiation, scientists at the Max Planck Institute of Quantum Optics (Garching, Germany) took snapshots of the briefest electron motion inside a solid material to date. The electron motion lasted only 750 billionths of the billionth of a second before it fainted, setting a new record of human capability to capture ultrafast processes inside solids!
When x-rays shine onto solid materials or large molecules, an electron is pushed away from its original place near the nucleus of the atom, leaving a hole...
For the first time, physicists have successfully imaged spiral magnetic ordering in a multiferroic material. These materials are considered highly promising candidates for future data storage media. The researchers were able to prove their findings using unique quantum sensors that were developed at Basel University and that can analyze electromagnetic fields on the nanometer scale. The results – obtained by scientists from the University of Basel’s Department of Physics, the Swiss Nanoscience Institute, the University of Montpellier and several laboratories from University Paris-Saclay – were recently published in the journal Nature.
Multiferroics are materials that simultaneously react to electric and magnetic fields. These two properties are rarely found together, and their combined...
MBM ScienceBridge GmbH successfully negotiated a license agreement between University Medical Center Göttingen (UMG) and the biotech company Tissue Systems Holding GmbH about commercial use of a multi-well tissue plate for automated and reliable tissue engineering & drug testing.
MBM ScienceBridge GmbH successfully negotiated a license agreement between University Medical Center Göttingen (UMG) and the biotech company Tissue Systems...
Pathogenic bacteria are becoming resistant to common antibiotics to an ever increasing degree. One of the most difficult germs is Pseudomonas aeruginosa, a...
19.09.2017 | Event News
12.09.2017 | Event News
06.09.2017 | Event News
20.09.2017 | Life Sciences
20.09.2017 | Power and Electrical Engineering
20.09.2017 | Physics and Astronomy