Recently, Prof. Lee's research team developed a fully functional flexible memory that is not affected by cell-to-cell interference. They solved the cell-to-cell interference issue by integrating a memristor (a recently spotlighted memory material as next-generation memory elements) with a high-performance single-crystal silicon transistor on flexible substrates. Utilizing these two advanced technologies, they successfully demonstrated that all memory functions in a matrix memory array (writing/reading/erasing) worked perfectly.
Prof. Lee said, "This result represents an exciting technology with the strong potential to realize all flexible electronic systems for the development of a freely bendable and attachable computer in the near future."
This result was published in the October online issue of the Nano Letters ACS journal.
Lan Yoon | EurekAlert!
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