The Fraunhofer Institute for Applied Solid State Physics IAF is active in the development of electronic and optoelectronic components and integrated circuits on the basis of group III/V semiconductors.
The technology encompasses epitaxy (MBE and MOVPE), optical and electron-beam lithography and suitable etching and metallization techniques. The available semiconductor technology is used to develop monolithic microwave and millimeter-wave integrated circuits (MMICs), optoelectronic integrated circuits (OEICs), and digital and multifunctional ICs. Their applications reside in mobile communications as well as in high-bit-rate optical data transmission and processing. Other development projects include optoelectronic components such as high-power diode lasers, blue emitters based on group III nitrides, infrared laser diodes with antimony-compound semiconductors and infrared detectors for the 2-12 µm wavelength range. The technology is being refined for the production of large-surface, self-supporting diamond layers (diameter up to 150 mm, thickness up to 3 mm) by means of plasma CVD for heat sinks, multispectrum windows and sensors. The institute undertakes work for semiconductor producers, companies engaged in information and communication technology, and laser manufacturers. It participates in a number of publicly funded joint programs and major projects. The Institute employs a staff of 200. It occupies over 8,000 m² of office, laboratory and clean-room space and is equipped with the process technology required for prototype and short-run production.
Fraunhofer-Institut Angewandte Festkörperphysik
Further information: http://www.iaf.fhg.de